SIMULATION OF MULTILEVEL RADIATION-INDUCED CHARGE TRAPPING AND THERMALLY ACTIVATED PHENOMENA IN SIO2

Authors
PAILLET P TOURON JL LERAY JL CIRBA C MICHEZ A
Citation
P. Paillet et al., SIMULATION OF MULTILEVEL RADIATION-INDUCED CHARGE TRAPPING AND THERMALLY ACTIVATED PHENOMENA IN SIO2, IEEE transactions on nuclear science, 45(3), 1998, pp. 1379-1384
Citations number
17
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1379 - 1384
Database
ISI
SICI code
0018-9499(1998)45:3<1379:SOMRCT>2.0.ZU;2-Q
Abstract
Charge trapping on several energy levels aid thermally activated detra pping phenomena in SiO2 have been determined by finite elements simula tion. The results obtained agree well with experimental charge detrapp ing measurements, and enable the simulation of post-irradiation effect s in Si/SiO2 structures.