PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES

Authors
GRUBER O PAILLET P MUSSEAU O MARCANDELLA C ASPAR B AUBERTONHERVE AJ
Citation
O. Gruber et al., PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1402-1406
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1402 - 1406
Database
ISI
SICI code
0018-9499(1998)45:3<1402:PCOETI>2.0.ZU;2-Y
Abstract
In this work, we study the trapping properties of Unibond(R) oxides. W e measure its radiative response under different irradiation condition s using both point-contact and MOS transistors. The results obtained s how both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shi ft by considering a second type of electron traps.