MECHANISMS FOR TOTAL-DOSE SENSITIVITY TO PREIRRADIATION THERMAL-STRESS IN BIPOLAR LINEAR MICROCIRCUITS

Authors
PEASE RL SHANEYFELT M WINOKUR P FLEETWOOD D GORELICK J MCCLURE S CLARK S COHN L ALEXANDER D
Citation
Rl. Pease et al., MECHANISMS FOR TOTAL-DOSE SENSITIVITY TO PREIRRADIATION THERMAL-STRESS IN BIPOLAR LINEAR MICROCIRCUITS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1425-1430
Citations number
17
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1425 - 1430
Database
ISI
SICI code
0018-9499(1998)45:3<1425:MFTSTP>2.0.ZU;2-P
Abstract
The ionizing radiation response of several semiconductor process techn ologies has been shown to be affected by preirradiation thermal stress . Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.