DOSE-RATE AND IRRADIATION TEMPERATURE-DEPENDENCE OF BJT SPICE MODEL RAD-PARAMETERS

Authors
MONTAGNER X BRIAND R FOUILLAT P SCHRIMPF RD TOUBOUL A GALLOWAY KF CALVET MC CALVEL P
Citation
X. Montagner et al., DOSE-RATE AND IRRADIATION TEMPERATURE-DEPENDENCE OF BJT SPICE MODEL RAD-PARAMETERS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1431-1437
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1431 - 1437
Database
ISI
SICI code
0018-9499(1998)45:3<1431:DAITOB>2.0.ZU;2-V
Abstract
A method to predict low dose rate degradation of bipolar transistors u sing high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the B JT SPICE model. This improved BJT model describes the radiation-induce d excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temper ature test method because of their high sensitivity to radiation-induc ed degradation.