SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY

Authors
DETCHEVERRY C ECOFFET R DUZELLIER S LORFEVRE E BRUGUIER G BARAK J LIFSHITZ Y PALAU JM GASIOT J
Citation
C. Detcheverry et al., SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1612-1616
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1612 - 1616
Database
ISI
SICI code
0018-9499(1998)45:3<1612:SSDIAS>2.0.ZU;2-3
Abstract
This work determines experimentally and by simulation the SEU sensitiv e depth in a 0.6 mu m SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy clos e to the critical energy. Other simulation results complete the first investigation bsi studying the minimum sensitive depth for ions deposi ng higher energies (at greater LET).