IN-FLIGHT AND GROUND TESTING OF SINGLE EVENT UPSET SENSITIVITY IN STATIC RAMS

Authors
JOHANSSON K DYREKLEV P GRANBOM B CALVET MC FOURTINE S FEUILLATRE O
Citation
K. Johansson et al., IN-FLIGHT AND GROUND TESTING OF SINGLE EVENT UPSET SENSITIVITY IN STATIC RAMS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1628-1632
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Part
3
Pages
1628 - 1632
Database
ISI
SICI code
0018-9499(1998)45:3<1628:IAGTOS>2.0.ZU;2-8
Abstract
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by t he atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and main ly high latitudes. The SEUs were monitored by a Component Upset Test E quipment (CUTE), designed for this experiment. The in flight results a re compared to ground based testing with neutrons from three different sources.