INDEPENDENTLY ADDRESSABLE VCSEL ARRAYS ON 3-MU-M PITCH

We present an exceedingly dense linear vertical-cavity surface-emittin g laser (VCSEL) array with independently addressable elements on a sta ggered 3-mu m pitch. Our devices utilize an all-epitaxial structure an d operate at a wavelength of 813 nm with threshold currents below 400 mu A. The high-packing density is enabled by combining transparent con tact technology with a planar laterally oxidized device architecture, The array exhibits low interelement thermal crosstalk and has electric al resistances of 3 M Omega between adjacent array elements.