ELECTRICAL-CONDUCTION AND ELECTRONIC-STRUCTURE OF SOME THIOSEMICARBAZIDE DERIVATIVES

Authors
KASSEM ME ALNAIMI IS AMIN RR
Citation
Me. Kassem et al., ELECTRICAL-CONDUCTION AND ELECTRONIC-STRUCTURE OF SOME THIOSEMICARBAZIDE DERIVATIVES, Journal of materials science. Materials in electronics, 6(4), 1995, pp. 240-243
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
6
Issue
4
Year of publication
1995
Pages
240 - 243
Database
ISI
SICI code
0957-4522(1995)6:4<240:EAEOST>2.0.ZU;2-T
Abstract
The dielectric response of some thiosemicarbazide derivatives has been studied as a function of frequency and temperature. The measurements were investigated using a Hioki RLC tester in the 0.1-100 kHz frequenc y region and in the temperature range 3d0-400 K. Analysis of a.c. cond uctivity reveals a faint semiconducting feature based predominantly on a diffusion-like behaviour mechanism followed by hopping of localized electrons.