TOWARD A VERY LOW-POWER INTEGRATED CHARGE PREAMPLIFIER BY USING III-VFIELD-EFFECT TRANSISTORS

The future high-energy physics experiments, based on the new high-lumi nosity accelerators, will require a new generation of front-end monoli thic electronics characterized, in particular, by high speed and low-p ower dissipation. In this perspective, the performances of Si and GaAs field effect transistors (FET's) are compared here in conditions of l ow-power dissipation. The advantages of solutions based on GaAs FET's, in applications requiring fast shaping times, are presented and exper imental results are reported. The criteria for the optimum choice of t he input transistor dimension and of its bias point are discussed.