PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS

Recent advances in the Epitaxy-on-Electronics (EoE) integration proces s, which combines commercial GaAs VLSI electronics with conventional e pitaxial growth and fabrication to produce complex, monolithic optoele ctronic integrated circuits (OEIC's), have resulted in improved integr ated light-emitting diodes (LED's), eliminated any impact on the preex isting electronics, and increased the robustness of the integration pr ocess. An EoE-integrated OEIC combining a photodetector, electronics, and LED is presented which demonstrates the capability of this technol ogy to now satisfy practical optoelectronic systems requirements.