X-CONDUCTION-ELECTRON TRANSPORT IN VERY THIN ALAS QUANTUM-WELLS

Authors
YAMADA S MAEZAWA K YUEN WT STRADLING RA
Citation
S. Yamada et al., X-CONDUCTION-ELECTRON TRANSPORT IN VERY THIN ALAS QUANTUM-WELLS, Physical review. B, Condensed matter, 49(3), 1994, pp. 2189-2192
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
3
Year of publication
1994
Pages
2189 - 2192
Database
ISI
SICI code
0163-1829(1994)49:3<2189:XTIVTA>2.0.ZU;2-I
Abstract
Magnetotransport behavior of two-dimensional X-band electrons created in modulation-doped very thin (25-75 Angstrom) AlAs quantum wells was studied. Effective-mass analysis based on temperature-dependent magnet oresistances clearly showed X(z)-X(xy) crossover at an AlAs thickness of about 45 Angstrom. This value is much smaller than that in an AlAs/ GaAs type-II superlattice (60 Angstrom). Origins of this difference we re discussed in terms of the effect of doping and degeneracy change an d of the change of strain due to the structure difference.