Ck. Inoki et al., SIMULTANEOUS OBSERVATION OF STARK-WANNIER AND FRANZ-KELDYSH REGIMES FOR DIFFERENT TYPES OF CARRIERS IN INXGA1-XAS GAAS SUPERLATTICES/, Physical review. B, Condensed matter, 49(3), 1994, pp. 2246-2249
We performed low-temperature (77 K) photomodulated transmission in two
different InxGa1-xAs/GaAs superlattices with fixed built-in fields. S
ample parameters are such that in one of them electrons are in the Sta
rk-Wannier field regime while in the other they are in the Franaz-Keld
ysh regime. In both samples, however, light holes are seen to be in th
e Franz-Keldysh regime. From this we infer that the light-hole valence
bands are essentially lined up on both sides of the InxGa1-xAs/GaAs h
eterojunction.