SIMULTANEOUS OBSERVATION OF STARK-WANNIER AND FRANZ-KELDYSH REGIMES FOR DIFFERENT TYPES OF CARRIERS IN INXGA1-XAS GAAS SUPERLATTICES/

Citation
Ck. Inoki et al., SIMULTANEOUS OBSERVATION OF STARK-WANNIER AND FRANZ-KELDYSH REGIMES FOR DIFFERENT TYPES OF CARRIERS IN INXGA1-XAS GAAS SUPERLATTICES/, Physical review. B, Condensed matter, 49(3), 1994, pp. 2246-2249
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
49
Issue
3
Year of publication
1994
Pages
2246 - 2249
Database
ISI
SICI code
0163-1829(1994)49:3<2246:SOOSAF>2.0.ZU;2-M
Abstract
We performed low-temperature (77 K) photomodulated transmission in two different InxGa1-xAs/GaAs superlattices with fixed built-in fields. S ample parameters are such that in one of them electrons are in the Sta rk-Wannier field regime while in the other they are in the Franaz-Keld ysh regime. In both samples, however, light holes are seen to be in th e Franz-Keldysh regime. From this we infer that the light-hole valence bands are essentially lined up on both sides of the InxGa1-xAs/GaAs h eterojunction.