HALL INSULATOR IN A 2-DIMENSIONAL ELECTRON-SYSTEM IN SILICON IN THE EXTREME QUANTUM LIMIT

We report diagonal- and Hall resistance measurements of the localized two-dimensional electron system in silicon in the high-field extreme q uantum limit. The Hall resistance has been found to be almost independ ent of temperature and close to its classical value, B/n(s)ec, while t he diagonal resistivity diverges at T --> 0. There is no evidence for nonlocal resistance due to special conductivity paths. These results s upport existence of the recently predicted Hall insulator state in sil icon in a high magnetic field.