ANOMALOUS BEHAVIOR OF EXCITONS AT LIGHT HOLES IN STRAINED (IN,GA)AS GAAS HETEROSTRUCTURES/

Authors
MOUMANIS K SEISYAN RP SASIN ME KAVOKIN AV KOKHANOVSKII SI GIBBS HM KHITROVA G
Citation
K. Moumanis et al., ANOMALOUS BEHAVIOR OF EXCITONS AT LIGHT HOLES IN STRAINED (IN,GA)AS GAAS HETEROSTRUCTURES/, Physics of the solid state, 40(5), 1998, pp. 731-733
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
40
Issue
5
Year of publication
1998
Pages
731 - 733
Database
ISI
SICI code
1063-7834(1998)40:5<731:ABOEAL>2.0.ZU;2-Q
Abstract
Additional localization of holes due to Coulomb attraction to the elec tron located in a quantum well is important for light-hole excitons in the heterostructure (In,Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in det ail with the formation of a ''Coulomb well'' and deformations taken in to account. (C) 1998 American Institute of Physics.