STRUCTURE OF THE FREE-EXCITON LUMINESCENCE BAND OF HETEROEPITAXIAL ZNSE GAAS LAYERS/

Authors
RAKOVICH YP GURSKII AL SMAL AS GLADYSHCHUK AA KHAMADI K
Citation
Yp. Rakovich et al., STRUCTURE OF THE FREE-EXCITON LUMINESCENCE BAND OF HETEROEPITAXIAL ZNSE GAAS LAYERS/, Physics of the solid state, 40(5), 1998, pp. 812-813
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
40
Issue
5
Year of publication
1998
Pages
812 - 813
Database
ISI
SICI code
1063-7834(1998)40:5<812:SOTFLB>2.0.ZU;2-L
Abstract
The exciton reflectance and photoluminescence spectra of epitaxial ZnS e/GaAs layers with a thickness of 2-4 mu m are investigated in the tem perature range 10-120 K. It is shown that one of the causes of the for mation of the doublet structure of the A(n=1) photoluminescence band i s interference of the exciton radiation at the boundaries of the near- surface dead layer. (C) 1998 American Institute of Physics.