DIFFUSION OF EXCITONS IN CDS-SE AND ZNSE-TE SOLID-SOLUTIONS AT HIGH-EXCITATION LEVELS

Citation
Aa. Klochikhin et al., DIFFUSION OF EXCITONS IN CDS-SE AND ZNSE-TE SOLID-SOLUTIONS AT HIGH-EXCITATION LEVELS, Physics of the solid state, 40(5), 1998, pp. 821-822
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637834
Volume
40
Issue
5
Year of publication
1998
Pages
821 - 822
Database
ISI
SICI code
1063-7834(1998)40:5<821:DOEICA>2.0.ZU;2-F
Abstract
It is shown that, with strong pulsed excitation, the intensity of the exciton recombination band in the fluctuation tail of the density of s tates in the limit of large times in the presence of traps is describe d by the asymptote of a solution to the diffusion equation. The critic al diffusion index corresponds to a ''normal'' process in the CdS-Se s olid solution and to ''anomalous'' diffusion in the case of ZnSe-Te. ( C) 1998 American Institute of Physics.