AN ACCURATE DUAL-GATE HFET NONLINEAR MODEL FOR MILLIMETER-WAVE MMIC DESIGN

Authors
ALLAM R KOLANOWSKI C DEJAEGER JC CROSNIER Y
Citation
R. Allam et al., AN ACCURATE DUAL-GATE HFET NONLINEAR MODEL FOR MILLIMETER-WAVE MMIC DESIGN, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(4), 1998, pp. 315-320
Citations number
16
Categorie Soggetti
Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
Journal title
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING → ACNP
ISSN journal
10964290
Volume
8
Issue
4
Year of publication
1998
Pages
315 - 320
Database
ISI
SICI code
1096-4290(1998)8:4<315:AADHNM>2.0.ZU;2-8
Abstract
An accurate nonlinear model for dual-gate HFETs is presented in this p aper. Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated per formance is obtained, and its validity is proved as it was used for th e design of an MMIC mixer at V-band. (C) 1998 John Wiley & Sons, Inc.