INGAAS INALAS/ALAS HETEROSTRUCTURE BARRIER VARACTORS FOR HARMONIC MULTIPLICATION/

In this letter, we report on the radio frequency (RF) characterization up to 110 GHz of probeable high-performance heterostructure barrier v aractors fabricated from InP-based strained epilayers, By making use o f a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-b ias capacitance of 1 fF/mu m(2) without deviation in the frequency ban d investigated. Good agreement between calculated and measured scatter ing parameters is found on the basis of electromagnetic simulation of diode embedding.