In this letter, we report on the radio frequency (RF) characterization
up to 110 GHz of probeable high-performance heterostructure barrier v
aractors fabricated from InP-based strained epilayers, By making use o
f a dual step-like barrier scheme, the voltage handling is as high as
12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-b
ias capacitance of 1 fF/mu m(2) without deviation in the frequency ban
d investigated. Good agreement between calculated and measured scatter
ing parameters is found on the basis of electromagnetic simulation of
diode embedding.