PREPARATION AND ANALYSIS OF LASER HETEROS TRUCTURES IN INGAASP GAAS AND INGAASP/INP WITH WAVE EMISSION BETWEEN 0.8 AND 1.3 MICROMETERS/

The present work reports about the fabrication and investigation of In GaAsP/InP and InGaAsP/GaAs lasers heterostructure with wavelength of 1 .3 and 0.8 mu m, respectively. We propose a method based on the concep t of solubility to determine the distribution of the temperature in th e oven along the graphite boat. That permits to know the temperature i mmediatly in the interface between the liquid phase and the substrate. This procedure together with a series of measurements of X-ray diffra ction and photoluminescence spectra allows to simplify the optimizatio n of the composition of the layers forming the heterostructure. The mo dified growth technology method by liquid phase epitaxy is described i n detail. Using a especial construction of the graphite boat allows to grow the layers with the thickness down to 50 Angstrom. We did a comp arative analysis of a laser double heterostructure and a separate conf inement heterostructure. The best threshold current densities were 270 and 370 A/cm(2) for the heterostructures with the wavelength of 0.8 a nd 1.3 mu m, accordingly. These magnitudes are comparable with the thr eshold current densities reported early in different articles for equi valent structures.