Measurements of photoconductivity decay from the steady state for samp
les of amorphous silicon and silicon-carbon alloys were carried out us
ing the experimental set-up with a Pockels cell as a light chopper. Th
e developed electronic switching circuit allows measurements of decay
times ranging down to microseconds. The advantage of the adopted metho
d of light switching is that one can easily control the light intensit
y and photon energy. From knowledge of the photoconductivity decay tim
e and the value of the steady state photoconductivity for a given samp
le, the carrier drift mobility can be calculated.