PULSED MICROWAVE S-PARAMETERS OF A SILICON-GERMANIUM HETEROJUNCTION BIPOLAR-TRANSISTOR

Authors
WARTENBERG CA WESTGATE CR
Citation
Ca. Wartenberg et Cr. Westgate, PULSED MICROWAVE S-PARAMETERS OF A SILICON-GERMANIUM HETEROJUNCTION BIPOLAR-TRANSISTOR, Microwave and optical technology letters, 18(4), 1998, pp. 258-264
Citations number
7
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
18
Issue
4
Year of publication
1998
Pages
258 - 264
Database
ISI
SICI code
0895-2477(1998)18:4<258:PMSOAS>2.0.ZU;2-0
Abstract
This paper presents the first published S-parameters of an Si/Si1-xGex /Si heterojunction bipolar transistor (HBT) measured under pulsed bias /pulsed RF conditions. Comparison is made ro those of an Si bipolar ju nction transistor (BJT) fabricated using the same mask set. Measuremen ts made over a 400 mu s pulse show how device self-heating dramaticall y affects the microwave-frequency response of the two devces. The resu lts emphasize the need for accurate characterization of microwave Si d evices in pulsed applications. (C) 1998 John Wiley & Sons, Inc.