A COMPACT AND UNIFIED MOS DC CURRENT MODEL WITH HIGHLY CONTINUOUS CONDUCTANCES FOR LOW-VOLTAGE ICS

A unified approach for the MOS transistor drain current modeling throu gh all the operation regions is presented. Instead of the direct sum a pproach, the proposed use of interpolation and sigmoid functions can u nify the drain current expression including the drift and diffusion co mponents for the weak-and strong-inversion regions. This approach resu lts in a differentiable continuity in conductances with respect to the gate, drain, and bulk bias voltages. As verified by the experimental data, the model shows an accurate prediction capability for the transc onductance and output conductance characteristics in both strong- and weak-inversion regions.