INTRACAVITY SPECTRAL SHAPING IN EXTERNAL-CAVITY MODE-LOCKED SEMICONDUCTOR DIODE-LASERS

Citation
Pj. Delfyett et al., INTRACAVITY SPECTRAL SHAPING IN EXTERNAL-CAVITY MODE-LOCKED SEMICONDUCTOR DIODE-LASERS, IEEE journal of selected topics in quantum electronics, 4(2), 1998, pp. 216-223
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
4
Issue
2
Year of publication
1998
Pages
216 - 223
Database
ISI
SICI code
1077-260X(1998)4:2<216:ISSIEM>2.0.ZU;2-X
Abstract
Intracavity spectral shaping techniques have been employed to artifici ally shape and broaden the optical spectrum of external cavity mode-lo cked semiconductor lasers, Using an intracavity spectrometer and inten sity Fourier-plane filtering, active mode-locked output spectra with a multiplicity of independently tunable wavelengths have been generated , while an adjustable intracavity etalon has been employed to generate an 18-nm spectral width, Furthermore, hybrid mode-locking with a mult iple-quantum-well (MQW) saturable absorber combined with the intracavi ty etalon, followed by dispersion compensation has led to the generati on of optical pulses of 330 fs in duration.