PHASE-CORRECT BOND LENGTHS IN CRYSTALLINE GEXSI1-X ALLOYS

Extended x-ray absorption fine structure performed at the Ge K edge ha s found the Ge-Ge and Ge-Si bond lengths in a series of crystalline Ge xSi1-x alloys (x less than or equal to 0.5) to be compositionally depe ndent. This accurate measurement was made possible by utilizing the ex perimentally derived Ge-Si atomic phase shift from the isoelectronic c ompounds AlAs and Gap. Strain and Coulomb contributions to the bond le ngths are also considered.