ANODIC SILICON DISSOLUTION IN ACIDIC FLUORIDE ELECTROLYTE - A PROBE BEAM DEFLECTION INVESTIGATION

Citation
S. Cattarin et al., ANODIC SILICON DISSOLUTION IN ACIDIC FLUORIDE ELECTROLYTE - A PROBE BEAM DEFLECTION INVESTIGATION, JOURNAL OF PHYSICAL CHEMISTRY B, 102(24), 1998, pp. 4779-4784
Citations number
29
Categorie Soggetti
Chemistry Physical
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
102
Issue
24
Year of publication
1998
Pages
4779 - 4784
Database
ISI
SICI code
1089-5647(1998)102:24<4779:ASDIAF>2.0.ZU;2-M
Abstract
Si anodic dissolution in acidic fluoride medium has been investigated in different regimes (porous silicon formation, electropolishing under stationary and oscillating current) by probe beam deflection (PBD) or the ''mirage'' technique. Evolution of deflection signal allows monit oring of dissolution processes both under polarization and at open cir cuit, providing for example an estimate of the oxide etch-back times d uring open circuit corrosion. The time evolution of deflection signal during current oscillations reveals components resulting from electroc hemical film formation and chemical dissolution. The PBD technique sho ws larger etching rates for the less passivating film (low potential) and smaller etching rates for the better passivating film (high potent ial). Our observations are compared with those obtained from spectrosc opic investigations of the oxide layer and their relevance for models of oxide formation, and dissolution is here discussed.