APPLICATION OF THE REFLECTION INTENSITY OF THE BIJVOET PAIR TO THE DETERMINATION OF ANOMALOUS SCATTERING FACTORS FOR GA

This paper discusses how to use the integrated reflection intensity of the Bijvoet pair for a polar crystal to determine the anomalous scatt ering factors f(Ga)' and f(Ga)'' for Ga near the Ga K absorption edge in GaAs. The values of f(Ga) and f(Ga)'' have been calculated from the integrated intensities of the +/-(333) and +/-(555) reflections bay u sing the methods of the present paper. The agreement between calculati ons and theoretical values is fairly good. Furthermore, the x-ray abso rption near-edge structure on the high-energy side near the K absorpti on edge has been given in the calculated values. Such a structure cann ot be predicted by Sasaki's results.