GROWTH OF PHOSPHORUS-DOPED POLYCRYSTALLINE DIAMOND FILMS ADN THEIR APPLICATION TO FIELD EMITTERS

Synthesis of diamond films doped with phosphorus (P) impurities has be en carried out by a hot-filament chemical vapor deposition method usin g CH3OH and H-2 as the source gas mixture. P2O5 is dissolved in CH3OH and transported with H-2 into a reaction chamber. Current-voltage char acteristics are obtained at various temperatures for P-doped diamond f ilms. The activation energy of the conductivity is estimated to be 0.4 9 eV from the Arrhenius plot. Electron emission is observed for the P- doped diamond film. The threshold electric field is estimated to be 14 V/mu m. Emission current as high as 10 mu A is obtained.