NANOCRYSTALLINE ALUMINUM NITRIDE AND ALUMINUM GALLIUM NITRIDE NANOCOMPOSITES VIA TRANSAMINATION OF [M(NME2)(3)](2), M=AL, AL GA(1/1)/

Reactions of [Al(NMe2)(3)](2) with NH3, mimicking the case of the rela ted Ga-derivative, provided an Al-amide-imide precursor that was pyrol yzed to pure nanocrystalline AIN. Based on that chemistry, a mixed Al/ Ga precursor system was designed to lead to the bimetallic nitride com posites. A prototype study included equilibration in hexane or toluene of the dimers [M(NMe2)(3)](2), M = Al, Ga, which resulted in the form ation of the homoleptic four-membered-ring compound (Me2N)(2)Al(mu-NMe 2)(2)Ga(NMe2)(2). Crystalline [M(NMe2)(3)](2), M = Al/Ga (1/1), obtain ed from this equilibration was structurally characterized. Transaminat ion/deamination reactions carried out with liquid NH3 in the preequili brated bimetallic system [Al(NMe2)(3)](2)/[Ga(NMe2)(3)](2), Al/Ga = 1/ 1, resulted in the mixed M-amide-imide precursors that were converted at 700-1100 degrees C to aluminum/gallium nitride nanocomposite materi als. The nature of these bulk nanocomposites has been elucidated by XR D, TEM/EDS, IR, and PL techniques.