EPITAXIAL-GROWTH WITH PHOSPHORUS - 3 - FORMATION OF INDIUM-PHOSPHIDE THIN-FILMS USING CYCLOHEXYLPHOSPHINE, (C6H11)PH2, AS THE ORGANOPHOSPHORUS SOURCE COMPOUND

The organophosphorus compound cyclohexylphosphine ((C6H11)PH2, PCH) wi th trimethylindium (TMI) cleanly forms thin films of crystalline indiu m phosphide (InP) under pyrolytic CVD conditions. These depositions ar e shown by Auger electron spectroscopy (AES) and other methods to be p olycrystalline InP. Depositions were performed on both silicon (Si) an d InP(100) substrates at temperatures and V/III ratios comparable to t hose employed in literature InP depositions with other phosphorus sour ce compounds. The deposited materials were characterized by scanning e lectron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), AES and X-ray thin film diffraction (XRD). The effect of precursor flo w rates, V/III ratios, and substrate temperatures on the morphologies and compositions of the deposited InP materials was also investigated for the cyclohexylphosphine-based depositions. (C) 1998 Elsevier Scien ce S.A.