SULFIDE FILMS ON PBSE THIN-LAYER GROWN BY MBE

The growth of PbSe layer on Si(111) substrate via a CaF2 thin buffer l ayer was realized by Molecular Beam Epitaxy (MBE). The process for for ming native sulfide films by chemical and anodic sulfidization is desc ribed. These methods, frequently used for III-V and II-VI materials, h ave not been yet studied for the PbSe surface passivation. The structu ral characterizations were realized by X-ray photoelectron spectroscop y (XPS), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). A comparative study between MBE. air exposure and passivated s urfaces is developed. An AES semi-quantitative calculation allows to e stimate the sulfur penetration thickness of about 15 Angstrom. The goo d chemical passivation and the stability in the time is shown. (C) 199 8 Elsevier Science S.A.