NB DOPED SRTIO3 THIN-FILMS DEPOSITED BY PULSED-LASER ABLATION

Citation
K. Fukushima et S. Shibagaki, NB DOPED SRTIO3 THIN-FILMS DEPOSITED BY PULSED-LASER ABLATION, Thin solid films, 315(1-2), 1998, pp. 238-243
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
315
Issue
1-2
Year of publication
1998
Pages
238 - 243
Database
ISI
SICI code
0040-6090(1998)315:1-2<238:NDSTDB>2.0.ZU;2-#
Abstract
Thin films of Nb doped SrTiOx (Nb-STO) have been fabricated on SrTiO3 (100) substrates by a pulsed laser deposition (PLD) technique and char acterized by XRD, AFM, XPS and electrical resistivity. It was found th at the preferred orientation of the deposited Nb-STO films was a-axis at a substrate temperature of 650 degrees C and oxygen pressures lower than 3 X 10(-1) Torr. The effect of the oxygen pressure on film prope rties such as surface roughness, lattice constants and chemical compos ition have been investigated. As the oxygen pressure was decreased, th e film surface morphology improved. Furthermore, the lattice constant of the a-axis increased with decreasing oxygen pressure, in spite of t here being no change in the Nb content detected in Nb-STO films. (C) 1 998 Elsevier Science S.A.