H. Lin et al., ELECTRICAL-PROPERTIES OF SOL-GEL-DERIVED TRANSPARENT TITANIA FILMS DOPED WITH RUTHENIUM AND TANTALUM, Thin solid films, 315(1-2), 1998, pp. 266-272
Transparent conductive TiO2 films doped with Ru and Ta were prepared o
n SiO2 glass substrates by the sol-gel method using Ti(OC3H7i)(4) solu
tions with HCl, HNO3 or diethanolamine (DEA) as a catalyst. The films
were anatase when HCl or HNO3 was added to the solution. The solution
preparation condition, solution composition, dopant content and hear-t
reatment temperature all affected the electrical resistivity of the re
sultant films. There was a clear tendency for the film resistivity to
become lower when the dopant solution was refluxed and HCl was used as
the additive. The resistivity decreased with increasing Ta content, b
ut decreased with increasing Ru content. Most of the films showed resi
stivity minima at a heat-treatment temperature of 700 degrees C. The l
owest resistivity of 10 similar to 100 Ohm cm was attained when only T
a was used as a dopant. (C) 1998 Elsevier Science S.A.