INFLUENCE OF ANODIZATION TIME, CURRENT-DENSITY AND ELECTROLYTE CONCENTRATION ON THE PHOTOCONDUCTIVITY SPECTRA OF POROUS SILICON

Authors
MEHRA RM AGARWAL V JAIN VK MATHUR PC
Citation
Rm. Mehra et al., INFLUENCE OF ANODIZATION TIME, CURRENT-DENSITY AND ELECTROLYTE CONCENTRATION ON THE PHOTOCONDUCTIVITY SPECTRA OF POROUS SILICON, Thin solid films, 315(1-2), 1998, pp. 281-285
Citations number
29
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
315
Issue
1-2
Year of publication
1998
Pages
281 - 285
Database
ISI
SICI code
0040-6090(1998)315:1-2<281:IOATCA>2.0.ZU;2-M
Abstract
Porous silicon layers emitting red photoluminescence (PL) have been pr epared by the anodisation of p-type [100] monocrystalline Si substrate in different HF concentrations. The steady state photoconductivity of porous silicon (PS) layers as a function of electrolyte concentration , anodisation time and current density has been studied. The photocond uctivity (PC) peak was observed to shift towards the shorter wavelengt h with the decrease in the crystallite size and it was interpreted to be the result of band gap widening. The recombination is found to have contribution from both the monomolecular and the bimolecular processe s. (C) 1998 Elsevier Science S.A.