THE STRENGTHENING MECHANISM OF DLC FILM ON SILICON BY MPECVD

Citation
Sl. Sung et al., THE STRENGTHENING MECHANISM OF DLC FILM ON SILICON BY MPECVD, Thin solid films, 315(1-2), 1998, pp. 345-350
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
315
Issue
1-2
Year of publication
1998
Pages
345 - 350
Database
ISI
SICI code
0040-6090(1998)315:1-2<345:TSMODF>2.0.ZU;2-U
Abstract
Diamond-like carbon (DLC) coatings were successfully produced on the s ilicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to an alyze the nano-particles in the coating. Both diamond and silicon carb ide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC i mproves the film quality in terms of crystallinity and hardness of the DLC coating significantly. (C) 1998 Elsevier Science S.A.