SURFACE AND TOMOGRAPHIC DISTRIBUTION OF CARBON IMPURITIES IN PHOTONIC-GRADE SILICON USING LASER-INDUCED BREAKDOWN SPECTROMETRY

Citation
D. Romero et Jj. Laserna, SURFACE AND TOMOGRAPHIC DISTRIBUTION OF CARBON IMPURITIES IN PHOTONIC-GRADE SILICON USING LASER-INDUCED BREAKDOWN SPECTROMETRY, Journal of analytical atomic spectrometry (Print), 13(6), 1998, pp. 557-560
Citations number
20
Categorie Soggetti
Spectroscopy
ISSN journal
02679477
Volume
13
Issue
6
Year of publication
1998
Pages
557 - 560
Database
ISI
SICI code
0267-9477(1998)13:6<557:SATDOC>2.0.ZU;2-K
Abstract
Laser-induced breakdown spectrometry (LIBS) has been tested as a metho d for surface analysis of photonic-grade silicon. A pulsed nitrogen la ser (337.1 nm) was used to create a microplasma on the silicon, the li ght from which was dispersed and detected by a charge-coupled device ( CCD) detector. A total area of 3 x 2.1 mm(2) was analysed with a later al resolution of 70 mu m and depth resolution of about 0.16 mu m. Fact ors affecting lateral and depth resolution of the approach were studie d. Two- and three-dimensional distribution maps of carbon contaminatio n on silicon are presented. Mapping by LIES seems to be a powerful too l to use for the 3D characterisation of solid samples combining in a s ingle step, surface and subsurface analysis capabilities.