IMPURITY-CHARACTERIZATION AGREEMENT IN TYPE-IIB SINGLE-CRYSTAL DIAMOND BY HIGH-TEMPERATURE HALL-EFFECT, CAPACITANCE-VOLTAGE, AND SECONDARY-ION MASS-SPECTROSCOPY MEASUREMENTS

The acceptor concentration of two type-IIb natural diamonds has been m easured by Hall effect (to 1300 K), capacitance-voltage (CV), and seco ndary-ion mass-spectroscopy measurements. Reduction of contact effects in both Hall and CV measurements resulted in excellent agreement betw een the three techniques. Hall contact size and placement effects were measured and corrected. The capacitance and resistance of the Ohmic c ontact for CV measurements were minimized with a large-area ion-implan ted contact. The long-standing discrepancy between Hall-effect and CV results in diamond is shown to be primarily due to nonideal CV contact s.