CRYSTALLINE-STRUCTURE OF YSZ THIN-FILMS DEPOSITED ON SI(111) SUBSTRATE BY CHEMICAL-VAPOR-DEPOSITION

Authors
HWANG SC LEE HG SHIN HS
Citation
Sc. Hwang et al., CRYSTALLINE-STRUCTURE OF YSZ THIN-FILMS DEPOSITED ON SI(111) SUBSTRATE BY CHEMICAL-VAPOR-DEPOSITION, The Korean journal of chemical engineering, 15(3), 1998, pp. 243-245
Citations number
6
Categorie Soggetti
Engineering, Chemical",Chemistry
Journal title
The Korean journal of chemical engineering → ACNP
ISSN journal
02561115
Volume
15
Issue
3
Year of publication
1998
Pages
243 - 245
Database
ISI
SICI code
0256-1115(1998)15:3<243:COYTDO>2.0.ZU;2-F
Abstract
Yttria-stabilized zirconia (YSZ) thin films were formed on Si(lll) sub strate by chemical vapor deposition (CVD) in a temperature range of 65 0-800 degrees C using beta-diketone metal chelates. The scanning elect ron microscopy (SEM) and X-ray diffraction (XRD) data evidenced that Y SZ thin films have a smooth surface with fine grains and crystalline s tructure, respectively. The crystalline structure of YSZ films was aff ected by the deposition temperature. The X-ray photoelectron spectrosc opy (XPS) data indicated that the YSZ film grows thick enough to preve nt the diffusion of Si.