LOAD-DEPENDENT ELECTRONIC STATES AT THE CRACK-TIP IN A SEMICONDUCTOR

Authors
BOULBITCH AA FISENKO AV
Citation
Aa. Boulbitch et Av. Fisenko, LOAD-DEPENDENT ELECTRONIC STATES AT THE CRACK-TIP IN A SEMICONDUCTOR, Physics letters. A, 243(5-6), 1998, pp. 345-350
Citations number
24
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
243
Issue
5-6
Year of publication
1998
Pages
345 - 350
Database
ISI
SICI code
0375-9601(1998)243:5-6<345:LESATC>2.0.ZU;2-Q
Abstract
Stress concentration at the crack tip in a brittle semiconductor gives rise to load-dependent electronic states localized at the crack tip. They either split out downwards from the bottom of a conductivity band or upward from the top of a valence band giving rise to a crack tip c harging. Being occupied, they decrease fracture toughness and fracture energy. (C) 1998 Elsevier Science B.V.