Di. Lubyshev et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ON A (311)A CORRUGATED SURFACE - GROWTH-MECHANISM AND MORPHOLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1339-1342
Kinetic molecular beam epitaxy growth processes and the structure of t
he InAs (311)A surface were investigated in situ by reflection high en
ergy electron diffraction (RHEED) and ex situ by low energy electron d
iffraction (LEED) and scanning tunneling microscopy (STM). Two stable
surface structures, (2X15) and (1x5), were observed by RHEED on as-gro
wn surfaces. RHEED oscillations have a strong azimuthal anisotropy wit
h maximum amplitude in the [(2) over bar 33] direction and minimum amp
litude in the [01 (1) over bar] direction, suggesting that this surfac
e grows via propagation and coalescence of pronounced two dimensional
nuclei along the [(2) over bar 33] azimuth. Ex situ LEED and STM studi
es of the As-capped InAs (311)A surfaces confirmed the strong anisotro
py of the surface structure. A characteristic feature of the LEED patt
erns is the degeneration of the principal diffraction into streaks alo
ng the [01 (1) over bar] direction. STM images show rows running along
the [(2) over bar 33] direction. Although the spacing between the row
s varies, there are local areas showing lateral periodicities of simil
ar to 2.15 nm [(1X5) structure] and similar to 6.45 nm [(2X15) structu
re] along the [01 (1) over bar] direction, consistent with RHEED obser
vations. (C) 1998 American Vacuum Society.