FACET INVESTIGATION IN SELECTIVE EPITAXIAL-GROWTH OF SI AND SIGE ON (001)SI FOR OPTOELECTRONIC DEVICES

The facet evolution and growth rate of Si on {hkl} facets were investi gated in the temperature range 700-850 degrees C using multilayer stru ctures with thick Si and very thin SiGe markers prepared by selective epitaxial growth using low pressure chemical vappr deposition. The mos t stable facet, observed at all temperatures, is the high index plane {113}. It is the dominant facet up to the top of all mesas (similar to 1 mu m thick). Even at the corners of square dots steep {113} facets developed [angle of 72 degrees with the (001) plane]. Several facets r eported here are observed for the first time. In the [110] zone it is the {119} facet, while in the [100] zone two facets with Miller indice s h not equal k not equal l not equal h, the {018} and {0 1 12}, are f ound. The measured growth rate relationship is R-111 < R-110 < R-113 < R-018 < R-119 < R-0112 < R-001. The activation energy of the growth ra te R-hkl On the facet is roughly equal to the activation energy for gr owth on (001), which implies that the same step involved in the deposi tion limits the growth rate on (001) and on {hkl} surfaces (at least f or the {111} and {113} facets). Only the {113} and {110} facets extend and grow from the beginning bf the epitaxy up to the top. The first d emonstration of photoluminescence from SiGe quantum wells grown on {11 3} Si is given. (C) 1998 American Vacuum Society.