THERMAL ANNEALING OF FLASH EVAPORATED CU(IN,GA)SE-2 THIN-FILMS

The electro-optical properties of semiconductors including Cu(In, Ga)S e-2 compounds suffer from various types of intrinsic defect levels suc h as grain boundaries and dislocations. The type and number of these c an vary considerably, depending on the various aspects of the fabricat ion processes of the semiconductors. However, the properties of the ma terial can be improved significantly by employing post-deposition proc edures. This paper presents results of studies carried out on the post -deposition thermal annealing of flash evaporated thin films of Cu(ln, Ga)Se,. The structural and electro-optical properties were analyzed u sing a variety of analytical techniques, including X-ray diffraction ( XRD), scanning electron microscopy (SEM) and Rutherford backscattering (RBS). A high resolution near-infrared photoacoustic spectrometer has also been employed to assess improvements in the optical properties f ollowing thermal annealing and correlated with the crystallite structu re. Results obtained for thin films of CIGS were compared to data gain ed from studies carried out on single crystals. (C) 1998 Elsevier Scie nce S.A. All rights reserved.