NEGATIVE DOMAIN-WALL CONTRIBUTION TO THE RESISTIVITY OF MICROFABRICATED FE WIRES

The effect of domain walls on electron transport has been investigated in microfabricated Fe wins (0.65 to 20 mu m linewidths) with controll ed stripe domains. Magnetoresistance (MR) measurements as a function o f domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventio nal sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity i s found. This result is discussed in light of a recent theoretical stu dy of the effect of domain walls on quantum transport.