SIMULATION OF ATOMIC-SCALE SURFACE MIGRATION IN HOMOEPITAXIAL GROWTH USING EMBEDDED-ATOM METHOD POTENTIALS FOR GOLD

Citation
J. Takano et al., SIMULATION OF ATOMIC-SCALE SURFACE MIGRATION IN HOMOEPITAXIAL GROWTH USING EMBEDDED-ATOM METHOD POTENTIALS FOR GOLD, Thin solid films, 318(1-2), 1998, pp. 52-56
Citations number
6
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
318
Issue
1-2
Year of publication
1998
Pages
52 - 56
Database
ISI
SICI code
0040-6090(1998)318:1-2<52:SOASMI>2.0.ZU;2-T
Abstract
Surface adsorption and surface diffusion are simulated by use of molec ular dynamics method and N-body embedded-atom method (EAM) potential f or gold. The relation between the growth rate of thin films and the pa cking density of atoms using Monte Carlo simulation is obtained. The r esults of the molecular dynamics method and the Monte Carlo method wer e combined, so that the growth process of thin films at elevated tempe ratures, which is too long to calculate, can be studied. (C) 1998 Else vier Science S.A.