MONTE-CARLO SIMULATION OF MISMATCH RELAXATION AND ISLAND COALESCENCE DURING HETEROEPITAXIAL GROWTH

Authors
ROUHANI MD MALEK R ESTEVE D
Citation
Md. Rouhani et al., MONTE-CARLO SIMULATION OF MISMATCH RELAXATION AND ISLAND COALESCENCE DURING HETEROEPITAXIAL GROWTH, Thin solid films, 318(1-2), 1998, pp. 61-64
Citations number
21
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
318
Issue
1-2
Year of publication
1998
Pages
61 - 64
Database
ISI
SICI code
0040-6090(1998)318:1-2<61:MSOMRA>2.0.ZU;2-7
Abstract
Simulation of heteroepitaxial growth with high lattice mismatch is rep orted. The dynamics of layer growth is treated using the Monte Carlo t echnique and the energetics aspects related to the effect of strain ar e accounted for in the VFF approximation. It is shown that the surface becomes rough and 3D islands, showing (111) facets, appear. The strai n relaxation is shown to be almost complete after a few atomic layers. Formation of point and extended defects is observed in the deposited layers. (C) 1998 Elsevier Science S.A.