SEMICONDUCTOR QUANTUM DOTS FOR APPLICATION IN DIODE-LASERS

Citation
M. Grundmann et al., SEMICONDUCTOR QUANTUM DOTS FOR APPLICATION IN DIODE-LASERS, Thin solid films, 318(1-2), 1998, pp. 83-87
Citations number
30
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
318
Issue
1-2
Year of publication
1998
Pages
83 - 87
Database
ISI
SICI code
0040-6090(1998)318:1-2<83:SQDFAI>2.0.ZU;2-O
Abstract
Recent progress in the epitaxy (molecular beam epitaxy and metal-organ ic chemical vapor deposition) of strained heterostructures and the use of the Stranski-Krastanow growth mode allows to create spontaneously ordered, defect-free and dense arrays of nano-size islands. Such islan ds act as electronic quantum dots. In superlattices the islands are or dered in vertical stacks. Using such self-ordered InGaAs/AlGaAs quantu m dots we have fabricated diode lasers for which some properties are s uperior to those of current lasers based on quantum wells. In particul ar, we have demonstrated low laser threshold current and high temperat ure stability of the threshold. (C) 1998 Elsevier Science S.A.