SILICON-BASED MULTILAYER STRUCTURES PREPARED BY REACTIVE PULSED-LASERDEPOSITION

Nanocrystalline-Si (nc-Si) films were prepared with reactive pulse las er deposition (during the deposition, oxygen or nitrogen gas was intro duced into the chamber). The effect of the formation conditions on the optical and photoluminescence properties of films have been analysed. The electronography of cross-sections was performed by transmission e lectron microscope. It was concluded that pulsed laser deposition is a method to produce the Si low-dimensional material. (C) 1998 Elsevier Science S.A.