Fe(001) films, 10-100 nm thick, were epitaxially grown by magnetron sp
uttering on GaAs(001) and on 100-nm-thick Au(001) buffer layers in an
UHV-based sputtering system. Excellent epitaxy is inferred from X-ray
diffraction measurements and the magnetic anisotropy of the films. Fro
m X-ray phi-scans, the epitaxial relationships Fe[100]parallel to GaAs
[100] and Fe[100]parallel to Au[110] were determined. Magnetic measure
ments by vibrating sample (VSM) and alternating gradient magnetometry
(AGM) show a distinct fourfold in-plane anisotropy with the anisotropy
constant of bulk Fe. Large-area patterning of the films was done by h
olographic lithography and ion beam etching. Square arrays of dots wit
h periods of 300 nm to 1 mu m, dot widths of 50 to 490 nm and differen
t heights were made. Magnetization measurements (VSM, AGM) show a clea
r change in the magnetic properties of the films dominated by the shap
e anisotropy of the dots. Again, for some of the samples a fourfold in
-plane anisotropy can be observed. (C) 1998 Elsevier Science S.A.