HR XRD FOR THE ANALYSIS OF ULTRATHIN CENTROSYMMETRIC STRAINED DB-RTD HETEROSTRUCTURES

Citation
M. Haase et al., HR XRD FOR THE ANALYSIS OF ULTRATHIN CENTROSYMMETRIC STRAINED DB-RTD HETEROSTRUCTURES, Thin solid films, 319(1-2), 1998, pp. 25-28
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
319
Issue
1-2
Year of publication
1998
Pages
25 - 28
Database
ISI
SICI code
0040-6090(1998)319:1-2<25:HXFTAO>2.0.ZU;2-2
Abstract
A nondestructive analysis of strained centrosymmetric double-barrier r esonant tunnelling diode (DB-RTD) layers is proposed. In the measured (004) rocking curves, the intrinsic barrier-well-barrier sequence resu lts in a beat under the strained layer peak which can be used for laye r analysis down to a thickness of nine monolayers. Based on the kinema tical theory, analytical relations are deduced which allow a direct co rrelation of the measured rocking-curve data to barrier and well-layer data. This method is applied to InP-based DB-RTD and is proven to be applicable to final devices including thick but lattice-matched contac t layers. (C) 1998 Published by Elsevier Science S.A.