HRTEM STUDY OF STRAINED SI GE MULTILAYERS

Deformation in Si/Ge strained multilayers has been characterised by HR TEM. The HRTEM strain profile determined by image treatment has been u sed to compare two growth techniques: Hot wire assisted gas source and ultra high vacuum molecular beam epitaxy. We have shown that for the first technique, germanium layers are highly strained. This is probabl y due to the incorporation of atomic hydrogen which would prevent rela xation by stacking faults formation. (C) 1998 Published by Elsevier Sc ience S.A.