OPTICAL AND DIGITAL PROCESSING OF HRTEM IMAGES OF SI THIN-FILMS DEPOSITED BY RTCVD

Thin films of Si deposited by R.T.C.V.D. on (001) Si wafer were invest igated on cross sectional sample using a JEOL 3010 high resolution mic roscope, in order to study the epitaxy and extended lattice defects fo rmed during the deposition process in the film. H.R.T.E.M. images of e xtended defects were investigated by optical Fourier analysis in diffe rent areas of the picture; the results are interpreted in terms of twi ns and periodicity of twin lamellae. Further analysis from digital pro cessing of the H.R.T.E.M. pictures was done by Gabor filtering and is interpreted in terms of strain field in the matrix. (C) 1998 Elsevier Science S.A.